| VFSHAY. _ 7 WWw'V'Shay'C°m Vishay General Semiconductor RATINGS AND cHARAcTERIsTIcs cunvEs (TA = 25 cc unless otherwise noted) 4'5 ---- ‘G00 4'0 ---- 2 EA 3.5 E m0 $ ---- I g E 3.0 S: w 10 3 25 2 O ' — 2] I g2 2.0 § 5 I §— II 2 1Eg 1'0 ‘E 0.1 1 E 1'5 2 IE I g TM Measured $ 2 0'5 at the cathode Band Terminal - E Z 0 Um ----0 25 50 75 100 125 150 175 10 20 30 40 50 60 70 80 90 100 Mount Temperature (“C) Percent of Rated Peak Reverse Voltage (‘7/n) Fig. 1 - Max. Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 1 00010010 Average Power Loss (W) Junction Capacitance (pF) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - FonNard Power Loss Characteristics Fig. 5 - Typical Junction Capacitance 100S5llS|| “0 _______ui%====== ----numm---- _’.. -?E_W ImmuIIIIII instantaneous Forward Current (A) Transient Thermal impedance (“C/W) 0.3 0.5 0.7 0.9 1.1 1.3 1.5 instantaneous Forward voltage (V) t- Pulse Duration (s) Fig. 3 - Typical Instantaneous FonNard Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 14?Aug-13 3 Document Number: 88770 For technical questions within your region: DiodesArnericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.visnay.oom/doc?91000 |